Gettering And Defect Engineering in Semiconductor Technology XI: Proceedings of the 11th International Autumn Meeting Giens (close to Marseilles), France September 25-30, 2005 (Solid State Phenomena)

This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at "La Badine" at the Giens peninsula south of France. This conference is held bi-annually with the main purpose to be an informal event gathering Eastern and Western researchers and engineers engaged in the field of semiconductor defect physics, materials science and technology. It offers ample time for discussion and informal interactions between scientists coming from all over the world ensuring lively exchanges of opinions and leading to a better understanding of the complex aspects of semiconductor materials (specially Si-based) which over the years was starting to shift from art into real science. The meeting as well as the proceedings volume is organized in 12 sessions: A - Crystal Growth, B - Nanoelectronics, C - Gettering and Passivation Techniques, D - H, O, N and C Impurities and Defects Modelling, E - Defects and Defect Engineering, F - Point Defects, Dopants and Diffusion, G- Silicon on Insulator, Silicon Germanium Alloys, H- Silicon for Solar Cells, J - Characterisation and Diagnostics, K - Semiconductor Materials other than Silicon, L - Silicon- Based Optoelectronics, M - Future Aspects.B. Pichaud is the author of 'Gettering And Defect Engineering in Semiconductor Technology XI: Proceedings of the 11th International Autumn Meeting Giens (close to Marseilles), France September 25-30, 2005 (Solid State Phenomena)', published 2005 under ISBN 9783908451136 and ISBN 3908451132.